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| Photo-electrochemical Study on Semiconductor Properties of Oxide Films Formed on 316L Stainless Steel in High Temperature Water |
| TAN Yu, LIANG Kexin, ZHANG Shenghan |
| School of Environment Science and Engineering, North China Electric Power University, Baoding 071000, China |
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Abstract The semiconductor property of oxide films formed on 316L stainless steel in high temperature water was investigated by photoelectrochemical responses technique. The photocurrent spectra of the oxide film formed on 316LSS in water at 288 ℃ showed three major characteristics: a band gap energy of 2.3 eV was attributed to the presence of Fe2O3, and/or Ni(OH)2; a band gap energy of 2.9 and 3.5 eV was attributed to Cr2O3 and a band gap energy in the range of 4.1 ~ 4.4 eV was attributed to the spinel phase Fe1-xNixCr2O4. Considering the relation of the photocurrent to the applied potential, it follows that the oxide film on 316L in high temperature water indicated an n-type semiconductor. Therefore, the photoelectrochemical responses technique, with full information about the photocurrent and the dephasing angles of the oxide films，represents a sensitive and powerful way to locally analyze the various oxide phases in the oxide scale.
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Received: 28 January 2013
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Cite this article:
TAN Yu,LIANG Kexin,ZHANG Shenghan. Photo-electrochemical Study on Semiconductor Properties of Oxide Films Formed on 316L Stainless Steel in High Temperature Water. Journal of Chinese Society for Corrosion and protection, 2013, 33(6): 491-495.
URL:
https://www.jcscp.org/EN/ OR https://www.jcscp.org/EN/Y2013/V33/I6/491
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