DDS含量对有机硅/SiO<sub>2</sub>杂化涂层性能的影响

中国腐蚀与防护学报

2011, Vol. 31

Issue (2): 116-120

研究报告

本期目录 | 过刊浏览

DDS含量对有机硅/SiO₂杂化涂层性能的影响

林继月, 刘光明,陈刚

南昌航空大学材料科学与工程学院南昌 330063

INFLUENCE OF DDS CONTENT ON THE PROPERTIES OF ORGANOSILICONE/SiO₂ HYBRID COATINGS

LIN Jiyue, LIU Guangming,CHEN Gang

School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063

全文: PDF(1083 KB)

摘要: 采用溶胶-凝胶法，以正硅酸乙酯(TEOS)为无机相前驱体，甲基三乙氧基硅烷(MTES)和二苯基二甲氧基硅烷(DDS)为有机相前驱体，盐酸和水为催化剂，通过水解-缩聚反应制备了不同DDS含量的有机硅/SiO₂有机-无机杂化溶胶。在100℃下经12 h烘干得到有机硅/SiO₂杂化涂层。涂层性能测试表明：随DDS含量增加，硬度、附着力、耐蚀性（未加DDS耐蚀性较差）有所下降；柔韧性均为1级。低温下涂层耐热性较好。溶胶中n(TEOS):n (MTES):n(DDS)为6:9:2时涂层综合性能最佳。

关键词 ：溶胶-凝胶, 有机硅/SiO₂杂化涂层, 盐雾试验, 电化学阻抗

Abstract：With tetraethyl orthosilicate (TEOS) as inorganic precursor, methyl triethoxysilane (MTES) and diphenyl dimethoxy silane (DDS) as organic precursor, hydrochloric acid and water as catalysts, organosilicone/SiO₂organic-inorganic hybrid sols with different content of DDS have been prepared through hydrolysis-polycondensation reaction. Then a hybrid coating was obtained by drying at 100℃ for 12 hours. It showed that the hardness, adhesion and corrosion-resistance performances decreased with the increasing content of DDS, the corrosion-resistance property was poor without adding any DDS. The flexibilities were the grade one. The heat-resistance of the coating was good under low temperature. The comprehensive performances of the coating were optimal when the molar ratio of TEOS:MTES:DDS was 6:9:2 in the sol.

Key words： sol-gel organosilicone/SiO₂ hybrid coating salt spray test EIS

收稿日期: 2010-01-25

ZTFLH:

TQ631.2

基金资助:

航空科学基金项目（2007ZE56009）资助

通讯作者: 刘光明 E-mail: tisic@126.com

Corresponding author: LIU Guangming E-mail: tisic@126.com

作者简介: 林继月，男，1977年生，硕士生，研究方向为材料腐蚀与防护

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引用本文:

林继月, 刘光明,陈刚. DDS含量对有机硅/SiO₂杂化涂层性能的影响[J]. 中国腐蚀与防护学报, 2011, 31(2): 116-120.
LIN Ji-Ru. INFLUENCE OF DDS CONTENT ON THE PROPERTIES OF ORGANOSILICONE/SiO₂ HYBRID COATINGS. J Chin Soc Corr Pro, 2011, 31(2): 116-120.

链接本文:

https://www.jcscp.org/CN/ 或 https://www.jcscp.org/CN/Y2011/V31/I2/116

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