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| INHIBITION MECHANISM OF SO2-4 IN AC ETCHING OF Al-FOIL |
| Zhesheng Feng;Zhanwen Xiao;Bangchao yang |
| 电子科技大学微电子与固体电子学院 |
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Abstract Pitting corrosion behavior of high purity Al-foil i n 2 mol/L HCl and 2 mol/L HCl+0.5 mol/L H2SO4 solution was investigated by c yclic triangular wave potentiodynamic method.The current signals were analyzed b y Daubechies2 wavelet transform yielded time-frequency information.The inhibitio n mechanism of SO2-4 in AC etching of high purity Al-foil was discussed. A new model of oxygen vacancy mechanism for high purity aluminum pitting corrosi on indicated that if the pH of the solution is less than the isoelectronic point ,the oxide film on aluminum will acquire positive charges,this positive charges point takes into account adsorption of Cl- and SO2-4.Cl- transport t hrough the oxide film by means of oxygen vacancies.O2- dissociate from SO 2-4 under the function of local electric field captured the oxygen vacan cy,decreased the concentration of oxygen vacancies,modified the transport networ k of Cl- in the oxide film.As the result,the probability of new pit initiation increased,this is high performance of inhibition of SO2-4 acted in AC e tching of Al-foil.
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Received: 17 August 2001
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Corresponding Authors:
Zhesheng Feng
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