High Temperature Oxidation Resistance of the Plasma Titanizing on Copper Surface by Double Glow Discharge

J Chin Soc Corr Pro

2004, Vol. 24

Issue (3): 139-142 DOI:

Research Report

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High Temperature Oxidation Resistance of the Plasma Titanizing on Copper Surface by Double Glow Discharge

Yuefei Zhang

北京印刷学院等离子体物理及材料实验室

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Abstract Double glow discharge is applied to pure copper substrate to obtaintitanizing alloying layer.The high temperature oxidation resistance of the plasma titanizing samples at 400℃ and 700℃ wasinvestigated.The oxidation kineticscurve was worked out.The morphologies of oxidation surface were observed and analyzed with a scanning electron microscope and the oxidation mechanism was ssed.The results show that plasma titanizing on copper surface can improve greatly the high temperatureoxidation resistance of copper.The oxidation rate of copper is less than that of plasma titanizing.The oxidation film of plasma titanizing sample is very dense and is not easily exfoliated.The dense oxidation film prevents the copper from more oxidation.

Key words: plasma titanizing pure copper high temperature oxidation resistance

Received: 16 October 2002

ZTFLH:

TG172.82

Corresponding Authors: Yuefei Zhang

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Yuefei Zhang. High Temperature Oxidation Resistance of the Plasma Titanizing on Copper Surface by Double Glow Discharge. J Chin Soc Corr Pro, 2004, 24(3): 139-142 .

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https://www.jcscp.org/EN/ OR https://www.jcscp.org/EN/Y2004/V24/I3/139

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