THE EFFECT OF ION IMPLANTATION ON THE TARNISHING RESISTANCE OF COPPER

J Chin Soc Corr Pro

1983, Vol. 3

Issue (4): 224-229 DOI:

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THE EFFECT OF ION IMPLANTATION ON THE TARNISHING RESISTANCE OF COPPER

Zhou Peide(Shanghai Institute of Metallurgy; Academia Sinica; Shanghai)

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Abstract The effect of Cr, Ta and inert gas ion implantation on the tarnishing resistance of high purity copper in hydrogen sulphide containing atmospheres has been studied using surface reflectance measurements, coulometrie reduction of surface films, scanning electron microscopy and wavelength dispersive analysis of X-rays. The exposure tests were conducted in air containing different levels of H_2S covering the range 0.006 to 6 VPM at 25℃ and 100％RH. Implantation of Cr and Ta markedly improves the tarnishing resistance of copper, Xe implantation gives a small improvement and Ar implantation has no effect. Coulometric reduction demonstrates that samples implanted with Cr and Ta have thinner tarnish films and that the composition of these films is different from that formed on unimplantedcopper. Seanningeteetron microscopy combined with WDAX analysis indicates that Cr implantation suppresses the formation of metallic sulphides in tarnish films on copper.

Received: 25 August 1983

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Zhou Peide(Shanghai Institute of Metallurgy; Academia Sinica; Shanghai). THE EFFECT OF ION IMPLANTATION ON THE TARNISHING RESISTANCE OF COPPER. J Chin Soc Corr Pro, 1983, 3(4): 224-229.

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https://www.jcscp.org/EN/ OR https://www.jcscp.org/EN/Y1983/V3/I4/224

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