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中国腐蚀与防护学报  2009, Vol. 29 Issue (3): 199-204    
  研究报告 本期目录 | 过刊浏览 |
硅烷偶联剂在镁电极固封中的作用
蔡宗平1;2;吕东生1;2;3;李伟善1;2;梁英1;2
1. 华南师范大学化学与环境学院 广州 510006
2. 广东高校电化学储能与发电技术重点实验室 广州 510631
3. 华南理工大学材料科学与工程学院 广州 510641)
EFFORT OF SILANE COUPLING AGENTS ON THE ADHERENCE OF MAGNESIUM ELECTRODE
CAI Zongping1;2; LV Dongsheng1;2;3; LI Weishan1;2; LIANG Ying1;2
1. Department of Chemistry; South China Normal University;Guangzhou; 510006
2. Key Lab of Technology on Electrochemical Energy Storage and Power Generation in Guangdong Universities;South China Normal University; Guangzhou; 510631
3. College of Materials Science and Engineering; South China University of Technology; Guangzhou 510641
全文: PDF(562 KB)  
摘要: 

采用浸涂工艺,用W-78和A-1200硅烷偶联剂对金属镁进行表面处理,然后固封制备成镁电极。对比分析了有和无硅烷偶联剂处理的镁电极的电化学行为。研究表明,两种硅烷偶联剂都可以改善镁电极的性能,显著提高了测试结果的重现性,其中A-1200效果更好。讨论了硅烷偶联剂W-78和A-1200的作用机理。

关键词 硅烷偶联剂镁电极金属表面预处理    
Abstract

The surface of magnesium was pretreated in the W-78 or A-1200 silane solution by dip-coating process as a base coating,then the magnesium electrodes with silane coupling agents were followed, of which the electrochemical properties and others are compared with the one that without silane coupling agents. The two silane coupling agents could improve the performance of the magnesium electrode, which make the results of  electrochemical test recur better, A-1200 is more superior to W-78. The affecting mechanism of W-78 and A-1200 silane solution is summarized in this paper.

Key wordssilane coupling agents    magnesium electrode    pretreatment of metal surface
收稿日期: 2007-10-25     
ZTFLH: 

TQ153.1

 
基金资助:

国家自然科学基金资助项目(No.20573039)

通讯作者: 李伟善     E-mail: liwsh@scnu.edu.cn
Corresponding author: LI Weishan      E-mail: liwsh@scnu.edu.cn
作者简介: 蔡宗平,男,1982年生,硕士生,研究方向为电化学

引用本文:

蔡宗平 吕东生 李伟善 梁英. 硅烷偶联剂在镁电极固封中的作用[J]. 中国腐蚀与防护学报, 2009, 29(3): 199-204.
SA Zong-Beng, LV Dong-Sheng, LI Wei-Shan. EFFORT OF SILANE COUPLING AGENTS ON THE ADHERENCE OF MAGNESIUM ELECTRODE. J Chin Soc Corr Pro, 2009, 29(3): 199-204.

链接本文:

https://www.jcscp.org/CN/      或      https://www.jcscp.org/CN/Y2009/V29/I3/199

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