化学腐蚀法显示InP单晶和外延层中的缺陷

中国腐蚀与防护学报

1987, Vol. 7

Issue (4): 281-285

研究报告

本期目录 | 过刊浏览

化学腐蚀法显示InP单晶和外延层中的缺陷

赵喆;沈宝良

上海工程技术大学;中国科学院上海冶金研究所

REVEALATION OF DEFECTS IN InP BY CHEMICAL ETCHING METHOD

Zhao Zhe (Shanghai University of Engineering and Technology) Shen Baoliang (Shanghai Institute of Metallurgy Academia Siniea)

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摘要: <正> 一、前言近年来,化学腐蚀技术已广泛地应用于Ⅲ-Ⅴ族化合物晶体结构缺陷的测定。由于光电器件的迅速发展,InP和GaAs等已成为激光和发光器件的重要材料。此类器件的性能直接与材料完整性有关。结构缺陷特别是位错将显著地影响器件的性能。例如在半导体激光和发光管中,如果发光区或其附近有位错存在,将造成暗线或暗点,除降低效率外,还会

Abstract：Six chemical etchants have been selected for reveating the defects in InP crystals. The choice of etchant composition and the optimum etching temperature for each etehant is based on experimental results for obtaining the dislocation patterns with clear etched pits. Finally, an etchant of (H_3PO_4+HBr)has been found which successfully reveals dislocations in VPE InP.

收稿日期: 1987-08-25

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赵喆;沈宝良. 化学腐蚀法显示InP单晶和外延层中的缺陷[J]. 中国腐蚀与防护学报, 1987, 7(4): 281-285.
. REVEALATION OF DEFECTS IN InP BY CHEMICAL ETCHING METHOD. J Chin Soc Corr Pro, 1987, 7(4): 281-285.

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https://www.jcscp.org/CN/ 或 https://www.jcscp.org/CN/Y1987/V7/I4/281

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