直接烧结SiC循环氧化行为的试验研究

江荣, 张悦, 张磊成, 高希光, 宋迎东

Experimental Study of Cyclic Oxidation Behavior of Direct-sintered SiC

JIANG Rong, ZHANG Yue, ZHANG Leicheng, GAO Xiguang, SONG Yingdong

图2 SiC在1400 ℃不同循环氧化时间下的表面形貌

Fig.2 Surface morphologies of SiC after cyclic oxidation at 1400 ℃ for 1 h (a, e), 2 h (b, f), 5 h (c, g), 12 h (d, h), 15 h (i, m), 24 h (j, n), 45 h (k, o), 90 h (l, p) (I, II, III, IV and V denote the sub-layer numbers of final oxide layer formed during the cyclic oxidation)