Oxide growth mechanism | Migration of interstitial cations | Migration of interstitial anions | Migration of anion vacancies |
Growth law | Weak Electric Field: L2=εLt Strong electric field: 1/L=A-Blnt1/L | Activation energy function of thickness L=Cln(1+Dt) | Transport controlled:L=(1/2K)[ln2Ka(b-1)+lnt] Interface controlled:L=Lt=0+(1/b)ln[1+abtexp(-bLt=0)] |
Electric Field | εL=V/L | Independent of L | Independent of L |
Limiting Growth Step | Weak electric field: Transport of cations through the film Strong electric field: Cation injection at m/f interface | Anion transport through the film | Transport controlled: Oxygen vacancies through film Interface controlled: Anion vacancy injection at m/f interface |
Dissolution | n/a | n/a | Dissolution of metal dissolution of oxide |
Interfacial potential drop | n/a | n/a | Function of pH and Vext |