REVEALATION OF DEFECTS IN InP BY CHEMICAL ETCHING METHOD

J Chin Soc Corr Pro

1987, Vol. 7

Issue (4): 281-285 DOI:

Current Issue | Archive | Adv Search

REVEALATION OF DEFECTS IN InP BY CHEMICAL ETCHING METHOD

Zhao Zhe (Shanghai University of Engineering and Technology) Shen Baoliang (Shanghai Institute of Metallurgy Academia Siniea)

Download:

PDF(1347KB)
Export: BibTeX | EndNote (RIS)

Abstract Six chemical etchants have been selected for reveating the defects in InP crystals. The choice of etchant composition and the optimum etching temperature for each etehant is based on experimental results for obtaining the dislocation patterns with clear etched pits. Finally, an etchant of (H_3PO_4+HBr)has been found which successfully reveals dislocations in VPE InP.

Received: 25 August 1987

	Service

	E-mail this article
	Add to citation manager
	E-mail Alert
	RSS
	（）
	Articles by authors

Cite this article:

Zhao Zhe (Shanghai University of Engineering and Technology) Shen Baoliang (Shanghai Institute of Metallurgy Academia Siniea). REVEALATION OF DEFECTS IN InP BY CHEMICAL ETCHING METHOD. J Chin Soc Corr Pro, 1987, 7(4): 281-285.

URL:

https://www.jcscp.org/EN/ OR https://www.jcscp.org/EN/Y1987/V7/I4/281

[1] Ueda, O. et al. J. J. Appl. phys., 23 (12) , 1551 (1984)
[2] Yamazaki. S.. et al, J. Appl. Phys.. 50(10) , 3478(1984)
[3] Yamamoto, A., et al, J. Electrochem. soc., 128(5) , 1095(1981)
[4] Clark, R. C. et al. J. Mater. Sci., 8, 1340 (1973)
[5] Huber, A., et al, J. Crys. Grow., 29, 80 (1975)
[6] Akita, K., et al, J. Crys. Grow., 96, 783(1979)
[7] Abahams, M. S., et al. J. Appl. Phys. 39． 2855(1965)

No related articles found!

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Shared

Discussed