High Temperature Oxidation as a Production Route for Electronic Materials

中国腐蚀与防护学报

2009, Vol. 29

Issue (4): 248-252

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High Temperature Oxidation as a Production Route for Electronic Materials

W. GAO1;Z. W. LI1;2

1. Department of Chemical and Materials Engineering; The University of Auckland; Private Bag 92019;Auckland; New Zealand
2. BRANZ Ltd; Judgeford; Porirua 5381; Private Bag 50908; New Zealand

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摘要:

Oxidation of metallic components often results in degradation and structural failure, prevention is therefore an important topic. On the other hand, oxidation process creates new products such as metal oxides, can be used as a production route. A well-known process in semiconductor industry is that oxidation in dry or wet atmosphere is a popular way for growth of multi-functional SiO₂ films on Si wafers. Recently, oxidation processes under controlled conditions (atmosphere, temperature, and time) are used to prepare various oxides, carbides, or nitrides with micro-/nano-structures, well-defined composition, dimension, shape and properties. The use of oxidation now includes thin film and nano-/micro-sized devices, and porous oxides for sensing and catalysis purposes. This paper introduces the research activities in the authors' group on applications of oxidation as a tool for synthesis of functional materials.

关键词 ： oxidation, electronic material, superconductor, thin oxide film

收稿日期: 2009-06-10

通讯作者: W.GAO E-mail: w.gao@auckland.ac.nz

作者简介: W. GAO1,Z. W. LI1,2

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引用本文:

W. GAO Z. W. LI. High Temperature Oxidation as a Production Route for Electronic Materials[J]. 中国腐蚀与防护学报, 2009, 29(4): 248-252.

链接本文:

https://www.jcscp.org/CN/Y2009/V29/I4/248

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